| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| PF0010 |
High Frequency Power MOS FET Module
|
Renesas Technology
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK3000-15 |
Silicon N Channel MOS FET Low Frequency Power Switching
|
Renesas Electronics Corporation
|
| 2SJ541 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ518 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ540 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK2887 A5800304 |
Transistors > MOS FET > Power MOS FET
Switching (200V, 3A)
From old datasheet system
|
ROHM[Rohm]
|
| 2SK2792 A5800302 |
Transistors > MOS FET > Power MOS FET
From old datasheet system
Switching (600V, 4A)
|
ROHM
|
| 2SK3019 2SK3019TL |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Transistors > MOS FET > Small Signal MOS FET
|
ROHM
|
| UPA1770 UPA1770G PA1770 G14055EJ1V0DS00 UPA1770G-E |
P-channel enhancement type power MOS FET(Dual type)
SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
From old datasheet system
|
NEC[NEC]
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
